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| www.irf.com 1 s d g automotive grade gds gate drain source d 2 pak AUIRF5210S s d g d features advanced planar technology p-channel mosfet low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss -100v r ds(on) max. 60m ? i d -38a parameter units i d @ t c = 25c continuous drain current, v gs @ -10v a i d @ t c = 100c continuous drain current, vgs @ -10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 0.75 c/w r ? ja junction-to-ambient (pcb mount, steady state) ??? 40 170 1.3 20 17 120 -23 300 -55 to + 150 -7.4 max. -38 -24 -140 3.1 2 www.irf.com !" # $ " % &'()*+& ,-. &' ? */ &012 !" 3 $ i sd ? 012* ?? 0-'24*5 ? 5 * % ? '() 6 ?? 14 ?? 7 8 9: 6);!30, <0 = $ 3 # : # >2?0@@, ? % @() static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)ds s drain-to-source breakdown voltage -100 ??? ??? v ?? v ds s / ? t j breakdown voltage temp. coefficient ??? -0.11 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 60 m ? a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 150 230 nc q gs gate-to-source charge ??? 22 33 q gd gate-to-drain ("miller") charge ??? 81 120 t d(on) turn-on delay time ??? 14 ??? ns t r rise time ???63??? t d(off) turn-off delay time ??? 72 ??? t f fall time ???55??? l d internal drain inductance ??? 4.5 ??? nh between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 2780 ??? pf c oss output capacitance ??? 800 ??? c rs s reverse transfer capacitance ??? 430 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -38 (body diode) a i sm pulsed source current ??? ??? -140 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 170 260 ns q rr reverse recovery charge ??? 1180 1770 nc t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by ls +ld) v ds = v gs , i d = - 250 a v ds = - 100v, v gs = 0v v ds = - 80v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = 10v, i d = -38a t j = 25c, i f = -23a, v dd = -25v di/dt = -100a/ s t j = 25c, i s = -23a, v gs = 0v showing the integral reverse p-n junction diode. v gs = - 10v mosfet symbol v gs = 0v v ds = - 25v conditions ? = 1.0mhz, see fig. 5 r g = 2.4 ? i d = -23a v ds = - 50v, i d = -23a v dd = - 50v i d = -23a v gs = 20v v gs = - 20v v ds = - 80v v gs = - 10v conditions www.irf.com 3 qualification information ? d 2 pak msl1 charged device model class c5 (+/- 1125v ) ?? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. rohs complia nt yes es d machine model class m4 (+/- 425v ) ?? aec-q101-002 human body model class h2 (+/- 4000v ) ?? aec-q101-001 4 www.irf.com !" # $ $% " & $% " & $% $ & 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v ? 60 s pulse width tj = 25c -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v ? 60 s pulse width tj = 150c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 2 4 6 8 10 12 14 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -50v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -38a v gs = -10v www.irf.com 5 '( ) " * $% + & + # #) , $% & - # #) , $% ) #- - . , 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -80v v ds = -50v v ds = -20v i d = -23a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec 6 www.irf.com ) $ $ & ) $ / '( 0 $ $ 12 # #& '( - & &$ 5 05 ???? ??????? 5 5 a b % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ??? ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci= ? i ? ri ci= ? i ? ri www.irf.com 7 + & $ & 3 + & / '( * 0 % - & q g q gs q gd v g charge #45, d.u.t. v ds i d i g -3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - 6 / 6 $ & t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -8.7a -14a bottom -23a 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 5 ??? ??? / a 3 9a9 ??? a b % 0a b % 7 ) + ) ????? + " / ???? < 6 ???? + + c / ) % # 7 6 #a b %# 60) 89 777 5 &' 5# + + 15a a . :#& 0;.0$) 5 www.irf.com 9 : < < & - & =>= //> / ? /? *>* 1<. 10 www.irf.com !" dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. www.irf.com 11 ordering information ba se part number package type standard pack complete part number form quantity AUIRF5210S d2pak tube 50 AUIRF5210S tape and reel left 800 AUIRF5210Strl tape and reel right 800 AUIRF5210Strr 12 www.irf.com ! 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